Detailed characterisation of a new large area CCD manufactured on high resistivity silicon
Detailed characterisation of a new large area CCD manufactured on high resistivity silicon
复制标题
高电阻率硅制造的新型大面积 CCD 的详细表征
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
P. Jorden
中科院分区：
文献类型：
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作者：
M. Robbins;P. Mistry;P. Jorden
E2V科技公司已经开发出了在非常高的电阻率硅上制造的“Hi-Rho”器件。采用了特殊的设计特性，可以施加极高的栅极到基板电位，而不会在前后基板连接之间产生明显的电流泄漏。所采用的方法允许遵循低噪声输出放大器电路的通常设计规则。因此，可以制造对红色和近红外波长非常敏感的低噪声器件。本文报告了为天文应用而设计的大尺寸“Hi-Rho”传感器的详细特性，并扩展了以前报道的数据，包括对CTE、空间分辨率、暗信号和美容质量的详细评估。还用两家不同制造商生产的硅基器件研究了基材的影响。给出了采用新开发的减反射镀膜工艺的器件的量子效率的测量结果。
e2v technologies has developed "Hi-Rho" devices manufactured on very high resistivity silicon. Special design features have been included that enable extremely high gate to substrate potentials to be applied without significant current leakage between back and front substrate connections. The approach taken allows the usual design rules for low noise output amplifier circuitry to be followed. Thus low noise devices very sensitive to red and near infrared wavelengths can be manufactured. This paper reports on the detailed characterisation of the large format "Hi-Rho" sensor designed for astronomical applications and extends the data previously reported to include detailed assessment of the CTE, spatial resolution, dark signal and cosmetic quality. The influence of the base material has also been investigated with devices manufactured on silicon from two different manufacturers. Measurements of the quantum efficiency from devices utilising a newly developed antireflection coating process are presented.