Detection and Electrical Properties of Cd1-xZnxTe Detectors at Elevated Temperatures.
Detection and Electrical Properties of Cd1-xZnxTe Detectors at Elevated Temperatures.
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DOI:
10.3233/xst-1996-6401
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发表时间:
1996-12
影响因子:
3
通讯作者:
S. Egarievwe;K. T. Chen;A. Burger;R. James;C. Lisse
中科院分区:
文献类型:
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作者:
S. Egarievwe;K. T. Chen;A. Burger;R. James;C. Lisse
We have studied the behavior of Cd1-xZnxTe detectors in the temperature range 24-70°C. The detector count rate stability and leakage currents are presented as a function of voltage, time, and temperature. Detector polarization due to bulk and surface effects leading to a decreased leakage current was observed. At 70°C, the position of the 32 keV photopeak of 133Ba was stable with time. The peak position varies within only 3 keV, and the peak quality factor varied between 0.31 and 0.41, for a 24 h period of operation at a 60 V bias. The net count to total count ratio was also stable, with values varying between 0.56 and 0.59. The net count to total count ratio decreased from 0.78 at 25°C to 0.71 at 60°C. The conclusion is that Cd1-xZnxTe is a promising material for gamma ray detection at temperatures above room temperature.