Gas sensing mechanism of TiO2-based thin films
Gas sensing mechanism of TiO2-based thin films
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DOI：
10.1016/j.vacuum.2003.12.152
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发表时间：
2004-05-24
期刊：
影响因子：
4
通讯作者：
Zakrzewska, K
中科院分区：
文献类型：
--
作者：
Zakrzewska, K
研究了两类薄膜气敏元件：掺铬或掺Nb的二氧化钛和二氧化锡-二氧化钛混合体系。用马赛克靶材反应溅射法制备了薄膜。结果表明，掺Nb和Cr的二氧化钛可以作为体相传感器。它的性能是由点缺陷的扩散控制的，即对于TiO29.5at%Nb传感器，钛空位的扩散非常缓慢，而对于TiO22.5at%Cr传感器，则是氧空位的快速扩散。相应的响应时间分别为55min：9.5at%Nb和20 S：2.5at%Cr。反过来，基于二氧化钛-二氧化锡的传感器，特别是那些富含二氧化锡的传感器，属于表面传感器的一组。(C)2004爱思唯尔有限公司。保留所有权利。
Two classes of thin film gas sensors have been studied: TiO2 doped with Cr or Nb and TiO2-SnO2 mixed systems. Thin films have been prepared by the reactive sputtering from mosaic targets. It is demonstrated that titanium dioxide doped with Nb and Cr should be considered as a bulk sensor. Its performance is governed by the diffusion of point defects, i.e. very slow diffusion of Ti vacancies for TiO2: 9.5 at% of Nb and fast diffusion of oxygen vacancies in the case of TiO2: 2.5 at% Cr sensor. The corresponding response times are 55 min for TiO2: 9.5 at% of Nb and 20 s for TiO2: 2.5 at% Cr. In turn, sensors based on TiO2-SnO2, particularly those of the SnO2-rich composition, belong to the group of surface sensors. (C) 2004 Elsevier Ltd. All rights reserved.