Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
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InP/InGaAs异质结双极晶体管集电极耗尽层中的电子速度超调效应
DOI：
10.1143/jjap.31.l768
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发表时间：
1992
影响因子：
1.5
通讯作者：
Tadao Ishibashi Tadao Ishibashi
中科院分区：
文献类型：
--
作者：
K. Kurishima;H. Nakajima;Y. K. Fukai;Yutaka Matsuoka Yutaka Matsuoka;Tadao Ishibashi Tadao Ishibashi
为了研究InP/InGaAs异质结双极晶体管中集电极耗尽层的电子速度过冲效应，制作了基区厚度为550 μ m、集电极厚度为3000 μ m的InP/InGaAs异质结双极晶体管.在室温下测量的本征延迟时间几乎保持恒定在0.7-0.8 ps，在0至1.1 V的基极/集电极偏压范围内，集电极电流密度为1×105 A/cm 2。根据Monte Carlo模拟结果，这种偏压独立的行为与在高集电极偏压下引起的足够大的过冲效应相关联，其中过冲速度由高电场增强。
InP/InGaAs heterojunction bipolar transistors with a 550-Å-thick base and 3000-Å-thick collector layers are fabricated to study the electron velocity overshoot effect in collector depletion layers. The intrinsic delay time evaluated at room temperature measurement remains almost constant at 0.7-0.8 ps in the investigated base/collector bias range of 0 to 1.1 V at a collector current density of 1×105 A/cm2. According to Monte Carlo simulation results, such bias-independent behavior is associated with the sufficiently large overshoot effect caused at high collector biases, where the overshoot velocity is enhanced by the high electric field.