Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
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泊松比不确定性对应变 InGaN 层弯曲参数计算的影响

DOI:
10.1557/s1092578300000181
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发表时间:
2001
期刊:
Mrs Internet Journal of Nitride Semiconductor Research
影响因子:
--
通讯作者:
Y. Shreter
Y. Shreter
中科院分区:
--
文献类型:
--
作者:
S. Stepanov;W. Wang;B. Yavich;V. Bougrov;Y. T. Rebane;Y. Shreter

文献摘要

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得到了In含量在0.2以下的赝晶应变InGaN层的发射能量与组分的关系。据发现,在公布的InGaN弯曲参数的值的“分散”的主要原因是泊松比确定的不确定性。结果表明,重新计算后,相同的泊松比,大多数公布的数据产生基本相同的结果相比,实验的不确定性。
The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.