Domain wall engineering in lead-free piezoelectric crystals
Domain wall engineering in lead-free piezoelectric crystals
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DOI：
10.1080/00150190701515881
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发表时间：
2007-01-01
期刊：
影响因子：
0.8
通讯作者：
Tsurumi, Takaaki
中科院分区：
文献类型：
--
作者：
Wada, Satoshi;Muraishi, Tomomitsu;Tsurumi, Takaaki
对于[111]极化的钛酸钡（BaTiO 3）单晶，压电性能随着畴尺寸的减小而增加。为了解释这一现象，多畴晶体被认为是由（a）具有压电特性的90度畸变畴壁区和（B）正常四畴区组成。该模型表明，畴尺寸小于1 μ m的无铅压电晶体的d（31）可以超过1, 000 pC/N。因此，为了诱导更精细的工程域配置，使用图案化电极。结果，成功地诱导了3Am的畴尺寸，并且在-243.2pC/N处获得d（31）。
For [111] poled barium titanate (BaTiO3) single crystals, piezoelectric properties increased with decreasing domain sizes. To explain the phenomenon, the multidomain crystals were regarded as composite of (a) a distorted 90 degrees domain wall region with ultrahigh piezoelectric property and (b) a normal tetragonal domain region. This model suggested that the d(31) of the lead-free piezoelectric crystals with domain sizes below 1 mu m can be over 1,000 pC/N. Thus, to induce the finer engineered domain configurations, a patterning electrode was used. As the results, the domain size of 3 Am was successfully induced, and the d(31) was obtained at -243.2 pC/N.