Resonant terahertz optical sideband generation from confined magnetoexcitons
Resonant terahertz optical sideband generation from confined magnetoexcitons
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DOI：
10.1103/physrevlett.79.1758
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发表时间：
1997-09-01
影响因子：
8.6
通讯作者：
Sakaki, H
中科院分区：
文献类型：
--
作者：
Kono, J;Su, MY;Sakaki, H
利用太赫兹电场共振驱动GaAs/AlGaAs量子威尔斯中的单光子和双光子内跃迁，研究了量子阱中磁激子的内部结构和非线性响应.强的近带隙发射线或光学边带出现在频率ω（NIR）+/-2n ω（THz）处，其中ω（NIR）是带间激子产生频率，ω（THz）是驱动场的频率，并且n是整数。边带的强度表现出明显的增强时，ω（太赫兹）符合磁调谐的能级之间的激子的跃迁，提供新的和准确的信息激子的内部动力学。
We have probed the internal structure and nonlinear response of magnetoexcitons in GaAs/AlGaAs quantum wells by resonantly driving one-and two-photon internal transitions with intense terahertz electric fields. Strong near-band-gap emission lines, or optical sidebands, appear at frequencies omega(NIR) +/- 2n omega(THz), where omega(NIR) is the interband exciton-creation frequency, omega(THz) is the frequency of the driving field, and n is an integer. The intensity of the sidebands exhibits pronounced enhancement when omega(THz) coincides with transitions between magnetically tuned energy levels in the excitons, providing new and accurate information on the internal dynamics of excitons.