Positron Annihilation Study on Nanocrystalline Copper Thin Films Doped with Nitrogen
Positron Annihilation Study on Nanocrystalline Copper Thin Films Doped with Nitrogen
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DOI：
10.1007/978-3-319-50784-2_2
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
P. M. Gordo;M. Marques;M. T. Vieira
中科院分区：
文献类型：
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作者：
P. M. Gordo;M. Marques;M. T. Vieira
采用直流磁控溅射法制备了纯铜和掺氮铜薄膜。在沉积过程中的氮的夹杂物已经揭示了一个重要的作用，在晶粒尺寸的减少，并在生产纳米晶铜薄膜的可能性。正电子湮没多普勒展宽测量已被执行，以确定晶格缺陷。晶粒和纳米孔之间的界面被确定为主要的晶格缺陷，并作为氮的位置在薄膜中的候选人。
Pure and nitrogen doped copper thin films were produced by dc magnetron sputtering. The inclusion of nitrogen during the deposition process has revealed an important role in the reduction of the grain size and in the possibility to produce nanocrystalline copper thin films. Positron annihilation Doppler broadening measurements have been performed in order to identify lattice defects. Interfaces between grains and nanopores were identified as the main lattice defects and as candidates for nitrogen location in the films.