Bond lengths in Ge 1-x Si x crystalline alloys grown by the Czochralski method
Bond lengths in Ge 1-x Si x crystalline alloys grown by the Czochralski method
复制标题
通过直拉法生长的 Ge 1-x Si x 晶体合金中的键长
DOI：
10.1103/physrevb.64.113206
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发表时间：
2001
影响因子：
3.7
通讯作者：
M. Sakurai
中科院分区：
文献类型：
--
作者：
I. Yonenaga;M. Sakurai
在整个成分范围0，x， 1内，我们测量了合金成分对chzochralski法生长的块状ge12 x Si x合金原子键合的影响。在20 K的锗K边缘进行的扩展x射线吸收精细结构测量发现，Ge-Ge和Ge- si键长度保持明显不同的长度，并随合金成分线性变化。根据测量的键长估算出的拓扑刚度参数约为0.6，表明键长和键角随合金成分的变化而发生畸变。
We measured the effect of alloy composition on the atomic bonding in bulk Ge 1 2 x Si x alloys grown by the Czochralski method across the whole composition range 0 , x , 1. Extended x-ray-absorption fine-structure measurements performed at the Ge K edge at 20 K found that the Ge-Ge and Ge-Si bond lengths maintain distinctly different lengths and vary linearly with alloy composition. The topological rigidity parameter, estimated from the measured bond lengths, is around 0.6, which indicates that the bond lengths and bond angles are distorted with alloy composition.