Postdeposition-Anneal Effect on Negative Bias Temperature Instability in HfSiON Gate Stacks
Postdeposition-Anneal Effect on Negative Bias Temperature Instability in HfSiON Gate Stacks
复制标题
沉积后退火对 HfSiON 栅极堆栈负偏压温度不稳定性的影响
DOI：
10.1109/tdmr.2007.897516
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发表时间：
2007
影响因子：
2
通讯作者：
M. Heyns
中科院分区：
文献类型：
--
作者：
M. Aoulaiche;M. Houssa;T. Conard;S. De Gendt;G. Groeseneken;H. Maes;M. Heyns
研究了不同环境下沉积后退火对金属有机化学气相沉积 HfSiO(N) 叠层负偏压温度不稳定性 (NBTI) 的影响。通过退火或去耦等离子体氮化 (DPN)，然后在 O2 或 N2 中进行氮化后退火（DPN + O2 和 DPN + N2 ）的氮化堆栈比非氮化堆栈（O2、N2 退火和沉积堆栈）更容易被 NBTI 降解。此外，氮化电池组均未达到 10 年 NBTI 寿命，而非氮化电池组的寿命则超过 10 年。通过 X 射线光电子能谱和电荷泵电流数据测量的氮分布显示了氮位置与栅极堆叠中带正电的缺陷之间的关系。氮化堆栈中额外的 NBT 退化是由于从沟道注入的空穴填充或产生与氮相关的缺陷。
The effect of postdeposition anneals in various ambients on negative bias temperature instability (NBTI) in metal-organic chemical-vapor-deposited HfSiO(N) stacks is investigated. The nitrided stacks, either by anneal or decoupled plasma nitridation (DPN) followed by a postnitridation anneal in O2 or N2 (DPN + O2 and DPN + N2 ), are more degraded by NBTI than the nonnitrided ones (O2, N2 anneal, and as deposited stacks). Moreover, none of the nitrided stacks reaches the 10-year NBTI lifetime, while the lifetime for the nonnitrided ones is larger than 10 years. Nitrogen profiles measured by X-ray photoelectrons spectroscopy and charge-pumping-current data show a relation between nitrogen location and positively charged defects in the gate stack. The additional NBT degradation in nitrided stacks is due to filling or generation of nitrogen-related defects by holes that are injected from the channel.