Growth and properties of gradient free sol-gel lead zirconate titanate thin films
Growth and properties of gradient free sol-gel lead zirconate titanate thin films
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DOI：
10.1063/1.2472529
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发表时间：
2007-02-05
影响因子：
4
通讯作者：
Muralt, P.
中科院分区：
文献类型：
--
作者：
Calame, F.;Muralt, P.
采用改进的溶胶-凝胶法在Pt（111）/TiOx/SiO2/Si衬底上制备了成分均匀的Pb（Zr-x，Ti 1-x）O-3薄膜。可以降低通过标准途径获得的B位组成的梯度，将Zr浓度波动从+/-12减少到+/-2.5at。%. 2 μ m厚、致密且无裂纹的膜表现出98.4%的{100}织构指数。粒径增加了50%。介电性能和压电性能显著提高。相对介电常数ε（33，f）为1620，并且反射横向压电系数e（31，f）被测量为-17.7cm-2。(c)2007年，美国物理学会。
Pb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form +/- 12 to +/- 2.5 at. %. The 2 mu m thick, dense and crack-free films exhibited a {100}-texture index of 98.4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsilon(33,f) was obtained as 1620, and the remanent transverse piezoelectric coefficient e(31,f) was measured as -17.7 Cm-2. (c) 2007 American Institute of Physics.