Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
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DOI：
10.1063/1.4707376
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发表时间：
2012-04-23
影响因子：
4
通讯作者：
Robertson, J.
中科院分区：
文献类型：
--
作者：
Dlubak, B.;Kidambi, P. R.;Robertson, J.
我们报告了一个很大的改善，在润湿的氧化铝薄膜生长的非种子原子层沉积在单层石墨烯，而不产生点缺陷。这种增强的润湿是通过使用由下面的金属衬底在石墨烯表面上诱导的极性陷阱来大大增加成核密度来实现的。然后通过标准方法将所得的Al 2 O3/石墨烯叠层转移到SiO2。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4707376]
We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4707376]