Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas
Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas
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DOI：
10.1143/jjap.47.6960
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发表时间：
2008-08
影响因子：
1.5
通讯作者：
Hack Joo Lee;B. Kwon;Hyun Woo Kim;Seon Il Kim;D. Yoo;J. Boo;N. Lee
中科院分区：
文献类型：
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作者：
Hack Joo Lee;B. Kwon;Hyun Woo Kim;Seon Il Kim;D. Yoo;J. Boo;N. Lee
采用电感耦合等离子体（ICPs）刻蚀技术，研究了ZnO和Al掺杂ZnO（AZO）在Cl 2/CH 4/H2/Ar（Cl 2基）和BCl 3/CH 4/H2/Ar（BCl 3基）中的刻蚀特性，并通过改变Cl 2/（Cl 2 + CH 4）和BCl 3/（BCl 3 + CH 4）流量比、上电极功率和直流自偏压（Vdc）比较了两种刻蚀方式的刻蚀特性。ZnO和AZO层的蚀刻速率在基于Cl 2的化学中比在基于BCl 3的化学中高。AZO和ZnO的蚀刻速率分别增加和减少，随着Cl 2或BCl 3流量比的增加。光发射光谱（OES）和X射线光电子能谱（XPS），分别在等离子体和表面结合状态的自由基物种的光发射测量表明，随着增加Cl 2或BCl 3流量比;在AZO中的Al的有效去除提高AZO蚀刻速率，而Zn（CHx）y产品的Zn的减少去除降低了ZnO蚀刻速率。
ZnO and Al-doped ZnO (AZO) were etched in Cl2/CH4/H2/Ar (Cl2-based) and BCl3/CH4/H2/Ar (BCl3-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the Cl2/(Cl2+CH4) and BCl3/(BCl3+CH4) flow ratios, top electrode power and dc self-bias voltage (Vdc). The etch rates of both ZnO and AZO layers were higher in the Cl2-based chemistry than in the BCl3-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing Cl2 or BCl3 flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing Cl2 or BCl3 flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the Zn(CHx)y products reduced the ZnO etch rate.