Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures
Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures
复制标题
用于磁电磁隧道结结构能量延迟分析的紧凑器件模型开发
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Andrew Marshall
中科院分区：
文献类型：
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作者：
Nishtha Sharma;Jonathan P. Bird;P. A. Dowben;Andrew Marshall
我们讨论了一类新型器件磁电磁隧道结 (ME-MTJ) 的应用，以实现各种计算功能，包括多数逻辑和 XNOR/XOR 门。我们还开发了一个紧凑模型来描述这些设备的运行，该模型通过利用“电压控制磁性”现象来切换 MTJ 的运行状态。该模型将切换过程分解为三个关键的操作阶段：电磁转换、磁化转移和最终状态读出。从这个紧凑模型获得的对这些器件的开关能量和延迟的估计表明，与通过自旋转移力矩开关的传统 MTJ 相比，这两个参数都有显着改进。事实上，使用 ME-MTJ 在单个器件内实现复杂逻辑运算的能力使其能源成本甚至可以接近低功耗 CMOS。非易失性和紧凑电路占用空间的额外优势，加上它们与 CMOS 异构集成的潜力，使得 ME 器件受到后 CMOS 技术的极大关注。
We discuss the application of a novel class of device, the magneto-electric magnetic tunnel junction (ME-MTJ) to realize a variety of computational functions, including majority logic and the XNOR/XOR gate. We also develop a compact model to describe the operation of these devices, which function by utilizing the phenomenon of ‘voltage-controlled magnetism’ to switch the operational state of MTJs. The model breaks down the switching process into three key stages of operation: electrical-to-magnetic conversion, magnetization transfer, and final-state readout. Estimates for the switching energy and delay of these devices, obtained from this compact model, reveal significant improvements in both of these parameters when compared to conventional MTJs switched by spin-transfer-torque. In fact, the capacity to use the ME-MTJ to implement complex logical operations within a single device allows its energy costs to even approach those of low-power CMOS. The added benefits of non-volatility and compact circuit footprint, combined with their potential for heterogeneous integration with CMOS, make the ME devices of considerable interest for post-CMOS technology.
影响因子：
56.9
作者：
Jonietz, F.;Muehlbauer, S.;Rosch, A.
通讯作者：
Rosch, A.