Crystal structure and epitaxy of Bi2Te3 films grown on Si
Crystal structure and epitaxy of Bi2Te3 films grown on Si
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DOI：
10.1063/1.4768259
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发表时间：
2012-11-26
影响因子：
4
通讯作者：
Grey, Francois
中科院分区：
文献类型：
--
作者：
Park, Jihwey;Soh, Yeong-Ah;Grey, Francois
我们报告全面的X射线衍射研究的晶体结构和外延生长的拓扑绝缘体Bi 2 Te 3在Si（1 1 1）上的薄膜。薄膜是高结晶质量的单晶，其强烈依赖于其衬底的结晶质量，具有平行于Si [1 - 1 0]的Bi 2 Te 3 [2 1 - 3 0]和平行于Si [1 1 - 2]的Bi 2 Te 3 [0 1 - 1 0]的面内外延关系，沿着该关系，1 × 3 Bi 2 Te 3和2 × 2 Si超晶胞的晶格很好地匹配。随着样品的老化，我们观察到晶体Bi 2 Te 3膜厚度的损失伴随着粗糙化的结晶界面，形成新的结晶相，以及组成和结构的修改的Si衬底，与扩散到Si衬底的Te。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4768259]
We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depend on that of their substrates, with in-plane epitaxial relationships of Bi2Te3 [2 1 -3 0] parallel to Si [1 -1 0] and Bi2Te3 [0 1 -1 0] parallel to Si [1 1 -2] along which the lattices of 1 x 3 Bi2Te3 and 2 x 2 Si supercells are well matched. As the samples age, we observe loss of crystalline Bi2Te3 film thickness accompanied with roughening of the crystalline interfaces, formation of new crystalline phases as well as compositional and structural modification of the Si substrate, consistent with the diffusion of Te into the Si substrate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768259]