Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
复制标题
通过锗离子减少 n 型 4H-SiC 中的注入引起的点缺陷
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. Krieger
中科院分区：
文献类型：
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作者：
T. Sledziewski;Gunter Ellrott;W. Rösch;H. B. Weber;M. Krieger
我们研究了注入Ge的n型4H-SiC外延层的电学性质。用深能级瞬变谱(DLTS)研究了Ge离子对注入诱导的点缺陷的影响。特别是，我们观察到随着注入锗剂量的增加，Z1/2缺陷的浓度降低。
We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2 defect with increasing dose of implanted germanium.