Resistive switching behaviors of ZnO nanorod layers
Resistive switching behaviors of ZnO nanorod layers
复制标题
DOI：
10.1063/1.3453450
复制
发表时间：
2010-06-14
影响因子：
4
通讯作者：
Wu, Tai-Bor
中科院分区：
文献类型：
--
作者：
Chang, Wen-Yuan;Lin, Chin-An;Wu, Tai-Bor
我们采用水热法在氧化铟锡（ITO）电极上制备了垂直排列的ZnO纳米棒层（NRL）。Pt/ZnO NRL/ITO电容器具有双极性阻变特性。电阻转换行为可能与限制在ZnO NR表面上的氧空位和/或锌空位有关，从而导致沿着每个垂直排列的ZnO NR形成直的且可延伸的导电细丝。电阻开关特性的上级稳定性也被观察到，表明ZnO NRL具有下一代非易失性存储器应用的潜力。(C)2010年美国物理学会。[doi：10.1063/1.3453450]
We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3453450]