800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
复制标题
DOI：
10.1063/1.4791678
复制
发表时间：
2013-02
影响因子：
4
通讯作者：
T. Nowozin;L. Bonato;A. Högner;A. Wiengarten;D. Bimberg;Wei-Hsun Lin;Shih-Yen Lin;C. Reyner;B. Liang;D. Huffaker
中科院分区：
文献类型：
--
作者：
T. Nowozin;L. Bonato;A. Högner;A. Wiengarten;D. Bimberg;Wei-Hsun Lin;Shih-Yen Lin;C. Reyner;B. Liang;D. Huffaker
测量了三种不同量子点尺寸的GaSb/GaAs量子点系综中空穴的局域化能、俘获截面和存储时间。的结构特性，如高度和直径，是由原子力显微镜，而电子特性的测量使用深能级瞬态光谱。不同的量子点表现出不同的空穴局域化能量对应于它们的大小。通过附加Al_（0.3）Ga_（0.7）As势垒获得了800（±50）meV的最大局域化能量。基于外推，替代材料系统被提出来进一步增加量子点的局域化能量和载流子存储时间。
The localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole localization energies corresponding to their size. The maximum localization energy of 800 (±50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the localization energy and carrier storage time of QDs.