Attachment of 3-(Aminopropyl)triethoxysilane on Silicon Oxide Surfaces: Dependence on Solution Temperature
Attachment of 3-(Aminopropyl)triethoxysilane on Silicon Oxide Surfaces: Dependence on Solution Temperature
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DOI：
10.1021/la8024827
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发表时间：
2008-11-18
期刊：
影响因子：
3.9
通讯作者：
Chabal, Yves J.
中科院分区：
文献类型：
--
作者：
Pasternack, Robert M.;Amy, Sandrine Rivillon;Chabal, Yves J.
用原位红外吸收光谱研究了3-氨丙基三乙氧基硅烷(APTES)在化学生长的二氧化硅(SiO_2)表面自组装形成氨基丙基硅烷(APS)膜的重要参数。类似于70℃的预退火显著提高了薄膜的质量：APS薄膜更致密，分子与SiO_2表面之间的Si-O-Si键更有结构和有序性，仅剩下有限数量的未反应乙氧基。相反，功能化的SiO_2样品在与APTES反应后的后退火(即非原位退火)并没有引起任何光谱变化，这表明后退火对前面提出的水平聚合没有很大的影响。红外光谱和椭偏仪数据都表明，在一定的浸泡时间内，溶液温度越高，APS层越致密、越薄。最后，在70℃下预退火得到的APS层在去离子水中表现出比室温下制备的APS层更好的稳定性。
Parameters important to the self-assembly of 3-(aminopropyl)triethoxysilane (APTES) on chemically grown silicon oxide (SiO2) to form an aminopropyl silane (APS) film have been investigated using in situ infrared (IR) absorption spectroscopy. Preannealing to similar to 70 degrees C produces significant improvements in the quality of the film: the APS film is denser, and the Si-O-Si bonds between the molecules and the SiO2 surface are more structured and ordered with only a limited number of remaining unreacted ethoxy groups. In contrast, post-annealing the functionalized SiO2 samples after room temperature reaction with APTES (i.e., ex situ annealing) does not lead to any spectral change, suggesting that post-annealing has no strong effect on the horizontal polymerization as suggested earlier. Both IR and ellipsometry data show that the higher the solution temperature, the denser and thinner the APS layer is for a given immersion time. Finally, the APS layer obtained by preannealing the solution at 70 degrees C exhibits a better stability in deionized water than the APS layer prepared at room temperature.