600 V High Voltage Gate Driver IC (HVIC) with 1.0 MHz High Frequency Operation for LLC Current Resonant Power Supply

600 V High Voltage Gate Driver IC (HVIC) with 1.0 MHz High Frequency Operation for LLC Current Resonant Power Supply
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DOI:
10.23919/ipec.2018.8507451
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发表时间:
2018-05
期刊:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
影响因子:
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通讯作者:
M. Yamaji;Masashi Akahane;Takahide Tanaka;A. Jonishi;H. Ohashi;M. Sasaki;H. Sumida
M. Yamaji;Masashi Akahane;Takahide Tanaka;A. Jonishi;H. Ohashi;M. Sasaki;H. Sumida
中科院分区:
其他
文献类型:
--
作者:
M. Yamaji;Masashi Akahane;Takahide Tanaka;A. Jonishi;H. Ohashi;M. Sasaki;H. Sumida

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针对LLC电流谐振电源,首次开发了工作频率高达1.0MHz的600V级高压栅极驱动器IC(HVIC)。该开发的难点在于抑制HVIC的芯片温度和传播延迟时间的上升。为了解决上述问题,我们修改了HVIC中的电平移位电路配置以及HVIC芯片中用于形成电平移位电路的器件结构。本文详细报告了我们已建立的技术。
For LLC current resonant power supply a 600 V-class high voltage gate driver IC (HVIC) with a high operating frequency of 1.0MHz has been developed for the first time. A difficult point of this development was to suppress increases in chip temperature and propagation delay time of the HVIC. For a solution to above point we have modified the level shift circuit configuration in the HVIC and the device structure for forming the level shift circuit in the HVIC chip. This paper reports our established techniques in detail.