Dielectronic recombination process in laser-produced tantalum plasmas.
Dielectronic recombination process in laser-produced tantalum plasmas.
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激光产生的钽等离子体中的双电子复合过程。
DOI：
10.1103/physreva.39.1053
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
N. Tragin
中科院分区：
文献类型：
--
作者：
C. Bauche;J. Bauche;Eliane Luc;J. Wyart;R. M. More;C. Chenais;J. Gauthier;J. Geindre;N. Tragin
本文研究了高离化钽激光等离子体光谱中出现的4.5 ~ 6.5A/cm ~ 2的3d-4f和3d-5 f发射花样，并解释了构成3d-4f和3d-5 f发射花样的伪连续谱。对于过渡子阵列怀疑是负责的pseudocontinuum，平均波长和宽度从头计算的自旋轨道分裂阵列的形式主义，这些子阵列被证明覆盖一个连续的波段的波长。对于它们的强度，双电子复合（DR）过程有效地填充了上部配置，在大多数情况下，位于电离水平之上。的自电离和辐射跃迁概率，和DR系数，从头计算，在整个配置或子配置的Cu类钽的平均值的形式。这些平均值的紧凑公式在中间耦合中有效，避免了任何对角化。所有所需的径向积分计算的相对论参数势中心场代码的装置。
The 3d-4f and 3d-5f emission patterns occurring between 4.5 and 6.5 Å in the spectra of laser-produced plasmas of highly ionized tantalum are studied, and the pseudocontinuum which underlies the former is interpreted. For the transition subarrays suspected to be responsible for the pseudocontinuum, the average wavelengths and widths are computed ab initio in the formalism of spin-orbit-split arrays; these subarrays are proven to cover a continuous band of wavelengths. For their intensities, the dielectronic recombination (DR) process populates efficiently the upper configurations, which, in most cases, lie above the ionization levels. The autoionization and radiative-transition probabilities, and the DR coefficients, are computed ab initio, in the form of averages for whole configurations or subconfigurations of Cu-like tantalum. The compact formulas for these averages are valid in intermediate coupling, avoiding any diagonalization. All the needed radial integrals are computed by means of a relativistic parametric potential central-field code.