Conductive tail-to-tail domain walls in epitaxial BiFeO3 films
Conductive tail-to-tail domain walls in epitaxial BiFeO3 films
复制标题
外延 BiFeO3 薄膜中的导电尾对尾畴壁
DOI：
10.1063/1.5045721
复制
发表时间：
2018-08-20
影响因子：
4
通讯作者：
Zhu, Jinsong
中科院分区：
文献类型：
--
作者：
Jin, Yaming;Xiao, Shuyu;Zhu, Jinsong
铁电畴壁作为一种独立的纳米电子元件，其复杂的导电性能越来越受到人们的关注。对于（001）外延BiFeO3薄膜，我们发现畴壁电导率在71°畴壁之间存在差异，尾对尾（T-T）畴壁的电导率高于头对头（H-H）和头对尾（H-T）畴壁。此外，观察到大部分导电区域由围绕T-T畴壁的两条平行线组成。这些实验结果可以用基于极化结构和隧道机制的理论模型很好地模拟。我们的工作将有助于理解铁电材料中畴壁电导的机理，并进一步促进畴壁在先进纳米器件中的应用。铁电畴壁作为一种独立的纳米电子元件，其复杂的导电性能越来越受到人们的关注。对于（001）外延BiFeO3薄膜，我们发现畴壁电导率在71°畴壁之间存在差异，尾对尾（T-T）畴壁的电导率高于头对头（H-H）和头对尾（H-T）畴壁。此外，观察到大部分导电区域由围绕T-T畴壁的两条平行线组成。这些实验结果可以用基于极化结构和隧道机制的理论模型很好地模拟。我们的工作将有助于理解铁电材料中畴壁电导的机理，并进一步促进畴壁在先进纳米器件中的应用。
The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.