Anomalous Hall effect in Co (x) Si1-x granular films deposited by magnetron co-sputtering
Anomalous Hall effect in Co (x) Si1-x granular films deposited by magnetron co-sputtering
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磁控共溅射Co(x)Si1-x颗粒薄膜中的反常霍尔效应
DOI：
10.1007/s10854-018-9021-4
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Peng D.L.
中科院分区：
文献类型：
--
作者：
Su A.M.;Wang L.S.;Zhang Q.F.;Xie J.;Luo Q.;Peng D.L.
In this research, CoxSi1−xgranular films with Co volume fraction (x) varying from 0.36 to 1 were prepared by using a magnetron co-sputtering method. The influence ofxon the temperature-dependent longitudinal resistivity () and anomalous Hall effect (AHE) in CoxSi1−xgranular films were systematically studied. The dependence ofon measuring temperature could be explained by the superposition of fluctuation-induced tunneling (FIT) process and temperature-dependent scattering. Interestingly, the contribution from scattering and FIT can be distinguished. The saturated Hall resistivity () increased monotonically with decreasingx. In addition, theamplified nearly 26-fold asxdecreased from 1 to 0.4. For the pure Co film (x= 1), the intrinsic and side jump mechanisms dominated the Hall transport. However, the deviation of classical scaling relation was observed in other samples, which was mainly ascribed to the influence of interfacial scattering.
