Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
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DOI：
10.1016/j.jcrysgro.2012.07.035
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发表时间：
2013-05-01
影响因子：
1.8
通讯作者：
Volz, K.
中科院分区：
文献类型：
--
作者：
Sommer, N.;Buss, R.;Volz, K.
用金属有机物气相外延法生长了含硼III/V族半导体（BGa）As、（BGa）P、（BGa）（AsP）和（BGaIn）P。研究了生长条件对最大掺硼量、掺硼效率和结构质量的影响，（BGa）P和（BGa）（AsP）的最大掺硼量分别为7.8%和9.9%。为了提高最大硼浓度和改善结构质量，需要在525 ℃的低生长温度和较高的V/III比下生长，并观察到（BGa）As和（BGa）P的硼掺入效率和最大硼浓度的差异。气相中的TBA/V比被确定为决定（BGa）（AsP）中的硼掺入效率的因素。（BGaIn）P样品的铟浓度为53%，最大硼浓度为4%。在III/V半导体中实现几个百分比的硼浓度的可能性为多结太阳能电池或半导体激光器等器件的应变工程提供了新的前景。(C)2012爱思唯尔有限公司版权所有。
The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal-organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated.A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 degrees C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality.A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized.The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers. (C) 2012 Elsevier B.V. All rights reserved.