Epitaxial growth of BaZrO3 films on single crystal oxide substrates using sol-gel alkoxide precursors
Epitaxial growth of BaZrO3 films on single crystal oxide substrates using sol-gel alkoxide precursors
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DOI：
10.1016/s0025-5408(97)00159-1
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发表时间：
1997-12-01
影响因子：
5.4
通讯作者：
Specht, ED
中科院分区：
文献类型：
--
作者：
Paranthaman, M;Shoup, SS;Specht, ED
在单晶衬底上外延生长了BaZrO 3（钡锆氧化物）薄膜。采用溶胶-凝胶法制备了BaZrO 3前驱体溶液。通过金属钡与2-甲氧基乙醇反应制备钡前驱体，通过正丙醇锆与2-甲氧基乙醇之间的配体交换制备锆前驱体。将所得BaZrO 3前体溶液部分水解并旋涂在蓝宝石（100）、SrTiO 3（锶钛氧化物）（100）和LaAlO 3（镧铝氧化物）（100）衬底上。将膜在快速热退火机中在氧气中在800 ° C下后退火2分钟。将涂覆和退火程序重复三次以获得所需的厚度，300 nm。X射线衍射研究表明，存在一个单一的（100）立方织构的BaZrO 3薄膜SrTiO 3和LaAlO 3衬底。在蓝宝石衬底上生长的BaZrO 3薄膜具有随机织构。在SrTiO_3衬底上生长的BaZrO_3薄膜具有明显的织构，而在LaAl O_3衬底上生长的BaZrO_3薄膜具有明显的织构。这可能是由于SrTiO 3和BaZrO 3之间的晶格失配相对较小。(C)1997 Elsevier Science Ltd.
Epitaxial BaZrO3 (barium zirconium oxide) films were grown on single crystal substrates. A BaZrO3 precursor solution was prepared by sol-gel synthesis using an all-alkoxide route. The barium precursors were prepared by reacting barium metal with 2-methoxyethanol, and zirconium precursors were prepared by exchanging ligands between zirconium n-propoxide and 2-methoxyethanol. The resulting BaZrO3 precursor solution was partially hydrolyzed and spin-coated on sapphire (100), SrTiO3 (strontium titanium oxide) (100), and LaAlO3 (lanthanum aluminum oxide) (100) substrates. The films were post-annealed in oxygen at 800 degrees C for 2 min in a rapid thermal annealer. The coating and the annealing procedures were repeated three times to obtain the desired thickness, 300 nm. X-ray diffraction studies showed the presence of a single (100) cube texture for BaZrO3 films on SrTiO3 and LaAlO3 substrates. The BaZrO3 films grown on sapphire had a random texture. The BaZrO3 films grown on SrTiO3 substrates had a sharp texture compared to that on LaAlO3 substrates. This may be due to the relatively smaller lattice mismatch between SrTiO3 and BaZrO3. (C) 1997 Elsevier Science Ltd.