Hole Transport Layer Free Perovskite Light-Emitting Diodes With High-Brightness and Air-Stability Based on Solution-Processed CsPbBr(3)-Cs(4)PbBr(6) Composites Films.
Hole Transport Layer Free Perovskite Light-Emitting Diodes With High-Brightness and Air-Stability Based on Solution-Processed CsPbBr(3)-Cs(4)PbBr(6) Composites Films.
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基于溶液加工 CsPbBr3-Cs4PbBr6 复合薄膜的具有高亮度和空气稳定性的无空穴传输层钙钛矿发光二极管
DOI:
10.3389/fchem.2022.828322
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发表时间:
2022
影响因子:
5.5
通讯作者:
Wu Z
中科院分区:
文献类型:
--
作者:
Yuan F;Zhang M;Zhu C;Liu X;Zhao C;Dai J;Dong H;Jiao B;Lan X;Wu Z
Recently, perovskite light-emitting diodes (PeLEDs) have drew widespread attention due to their high efficiencies. However, because of the sensitivity to moisture and oxygen, perovskite luminescent layers are usually prepared in high-purity nitrogen environment, which increases the cost and process complexity of device preparation and seriously hindrances its commercialization of PeLED in lighting and display application. Herein, dual-phase all-inorganic composite CsPbBr3-Cs4PbBr6 films are fabricated from CsBr-rich perovskite solutions by a simple one-step spin-coating method in the air with high humidity. Compared with the pure CsPbBr3 film, the composite CsPbBr3-Cs4PbBr6 film has much stronger photoluminescence emission and longer fluorescence lifetime, accompanied by increased photoluminescence quantum yield (33%). As a result, we obtained green PeLED devices without hole transport layer exhibiting a maximum brightness of 72,082 cd/m2 and a maximum external quantum efficiency of about 2.45%, respectively. More importantly, the champion device shows excellent stability with operational half-lifetime exceeding 1,000 min under continuous operation in the air. The dual-phase all-inorganic composite CsPbBr3-Cs4PbBr6 film shows attractive prospect for advanced light emission applications.
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