Bilayer Pseudospin Field-Effect Transistor: Applications to Boolean Logic
Bilayer Pseudospin Field-Effect Transistor: Applications to Boolean Logic
复制标题
双层赝自旋场效应晶体管：在布尔逻辑中的应用
DOI：
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发表时间：
2010
影响因子：
3.1
通讯作者：
S. Banerjee
中科院分区：
文献类型：
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作者：
D. Reddy;L. F. Register;E. Tutuc;S. Banerjee
我们最近提出了一种新型的基于双层石墨烯的晶体管，用于超低功耗（与CMOS相比可能低1000倍）室温操作，即双层赝自旋场效应晶体管（BiSFET）。BiSFET操作基于门控激子-冷凝物增强隧穿。在这里，我们讨论基于BiSFET的布尔逻辑门的实现、操作和预测功耗，包括反相器、基于反相器的或非门、可编程NAND/OR以及基于BiSFET的存储器元件。在较低的电压和功耗方面优于CMOS的讨论。
We have recently proposed a new type of bilayer graphene-based transistor for ultralow-power (perhaps 1000 times less compared with CMOS) room-temperature operation, namely, the bilayer pseudospin field-effect transistor (BiSFET). BiSFET operation is based on gated exciton-condensate-enhanced tunneling. Here, we discuss implementation, operation, and predicted power consumption of BiSFET-based Boolean logic gates, including an inverter, an inverter-based nor gate, and a programmable nand/or, as well as a BiSFET-based memory element. The advantages over CMOS in terms of lower voltage and power are discussed.