Crystal Growth in Amorphous Selenium Thin Films─Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements

Crystal Growth in Amorphous Selenium Thin Films─Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements
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非晶硒薄膜中的晶体生长 — 回顾与回顾:显微测量与量热测量的直接比较

DOI:
10.1021/acs.cgd.1c00984
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发表时间:
2021
影响因子:
3.8
通讯作者:
M. Krbal
M. Krbal
中科院分区:
化学2区
文献类型:
--
作者:
R. Svoboda;J. Přikryl;V. Cicmancova;V. Prokop;A. Kolobov;M. Krbal

文献摘要

被引文献

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用一种独特的直接显微测量和量热测量相结合的方法研究了在Kapton带和铝箔上沉积的非晶态Se(500 Nm)薄膜的晶体生长。在65-110℃温度范围内用显微镜测定的晶体生长速率(Ur)与块体硒玻璃的晶体生长速率(Ur)相似。晶体生长动力学用螺位错模型描述,其温度依赖于生长激活能Eg和Ediger的解耦参数ξ。对薄膜中晶体生长速率的文献数据进行了广泛的分析,揭示了薄膜/衬底界面附近[Se]链的悬挂键的数量和分布对晶体生长速度的主导作用。当考虑到杂质、衬底质量、光照和沉积条件的影响时,表面散射的文献数据被发现是一致的。用差示扫描量热法(DSC)观察到了硒薄膜中晶体生长的宏观表现,其对应的活化能与光学显微镜测得的─值基本一致,所用的Avrami方程能够准确地描述宏观的DSC数据。从白玻璃衬底上刮下的硒薄膜的DSC测量表明,这种材料的上述生长抑制了结晶,这可以解释为机械激活结晶中心主导生长的证据。
A newly developed unique combination of direct microscopic and calorimetric measurements was used to study the crystal growth in amorphous selenium (a-Se) thin films (500 nm) deposited on Kapton tape and aluminum foil. The crystal growth rates (ur) microscopically determined in the 65–110 °C temperature range were similar to those for bulk selenium glass. The crystal growth kinetics was described in terms of the screw dislocation model with implemented temperature dependences of the growth activation energyEGand Ediger’s decoupling parameter ξ. Extensive analysis of the literature data on the crystal growth rates in thin selenium films revealed the dominant effect of the number and distribution of the dangling bonds of the [Se]nchains adjacent to the film/substrate interface. The seemingly scatteredur–Tliterature data were found to be consistent when the influences of impurities, substrate quality, illumination, and deposition conditions were accounted for. The macroscopic manifestation of the crystal growth in selenium thin films was observed by means of differential scanning calorimetry (DSC)─the corresponding activation energies were similar to theEGvalues determined by optical microscopy; the Avrami equation with the implementedur–Tdependence was able to accurately describe the macroscopic DSC data. Additional DSC measurements for the selenium thin film scraped off the white glass substrate have shown that the above-Tgannealing of such a material suppresses the crystallization, which can be interpreted as the evidence of the dominant growth from the mechanically activated crystallization centers.