Crystal Growth in Amorphous Selenium Thin Films─Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements
Crystal Growth in Amorphous Selenium Thin Films─Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements
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非晶硒薄膜中的晶体生长 — 回顾与回顾:显微测量与量热测量的直接比较
DOI:
10.1021/acs.cgd.1c00984
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发表时间:
2021
影响因子:
3.8
通讯作者:
M. Krbal
中科院分区:
文献类型:
--
作者:
R. Svoboda;J. Přikryl;V. Cicmancova;V. Prokop;A. Kolobov;M. Krbal
A newly developed unique combination of direct microscopic and calorimetric measurements was used to study the crystal growth in amorphous selenium (a-Se) thin films (500 nm) deposited on Kapton tape and aluminum foil. The crystal growth rates (ur) microscopically determined in the 65–110 °C temperature range were similar to those for bulk selenium glass. The crystal growth kinetics was described in terms of the screw dislocation model with implemented temperature dependences of the growth activation energyEGand Ediger’s decoupling parameter ξ. Extensive analysis of the literature data on the crystal growth rates in thin selenium films revealed the dominant effect of the number and distribution of the dangling bonds of the [Se]nchains adjacent to the film/substrate interface. The seemingly scatteredur–Tliterature data were found to be consistent when the influences of impurities, substrate quality, illumination, and deposition conditions were accounted for. The macroscopic manifestation of the crystal growth in selenium thin films was observed by means of differential scanning calorimetry (DSC)─the corresponding activation energies were similar to theEGvalues determined by optical microscopy; the Avrami equation with the implementedur–Tdependence was able to accurately describe the macroscopic DSC data. Additional DSC measurements for the selenium thin film scraped off the white glass substrate have shown that the above-Tgannealing of such a material suppresses the crystallization, which can be interpreted as the evidence of the dominant growth from the mechanically activated crystallization centers.