Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
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DOI：
10.1016/j.apsusc.2018.05.232
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发表时间：
2018-12-15
影响因子：
6.7
通讯作者：
Gonnelli, Renato S.
中科院分区：
文献类型：
--
作者：
Piatti, Erik;Chen, Qihong;Gonnelli, Renato S.
我们制作离子门控场效应晶体管（iFET）的机械剥离多层二硫化钼。我们通过Al 2 O3封装薄片，仅在边缘处暴露器件通道。通过用高于类似于330 K的基于Li的聚合物电解质对样品进行门控来诱导MoS 2晶格中的稳定Li+嵌入，并且通过将器件猝灭到类似于300 K来固定掺杂状态。这种嵌入过程诱导出现异常的温度依赖性的薄层电阻和它的第一个衍生物，这通常与结构/电子/磁性相变。我们认为，这些异常的电阻率的二硫化钼可以自然地解释为一个过渡到一个电荷密度波相诱导锂化的签名，根据最近的理论计算。
We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS2. We encapsulate the flake by Al2O3, leaving the device channel exposed at the edges only. A stable Li+ intercalation in the MoS2 lattice is induced by gating the samples with a Li-based polymeric electrolyte above similar to 330 K and the doping state is fixed by quenching the device to similar to 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS2 can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.