Fabrication of graphene: CdSe quantum dots/CdS nanorod heterojunction photodetector and role of graphene to enhance the photoresponsive characteristics

Fabrication of graphene: CdSe quantum dots/CdS nanorod heterojunction photodetector and role of graphene to enhance the photoresponsive characteristics
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DOI:
10.1088/1361-6528/abf87a
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发表时间:
2021-02
期刊:
影响因子:
3.5
通讯作者:
Chandrasekar Perumal Veeramalai;P. Kollu;Guochen Lin;Xiaoming Zhang;Chuanbo Li
Chandrasekar Perumal Veeramalai;P. Kollu;Guochen Lin;Xiaoming Zhang;Chuanbo Li
中科院分区:
材料科学3区
文献类型:
--
作者:
Chandrasekar Perumal Veeramalai;P. Kollu;Guochen Lin;Xiaoming Zhang;Chuanbo Li

文献摘要

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石墨烯与半导体量子点(QD)的集成提供了一种优雅的方式来同时访问石墨烯的本征性质和QD的光学性质,以实现高性能的光电子器件。在本文中,我们展示了基于石墨烯的高性能光电探测器:CdSe量子点/CdS纳米棒异质结。所得到的异质结光电探测器具有器件配置ITO/graphene:CdSe/CdS nanorods/Ag,显示出优异的工作特性,包括在530 nm光照射下的最大光响应率为15.95 AW−1和比探测率为6.85 × 1012 Jones。该器件具有545 ms的光响应上升时间和539 ms的衰减时间。此外,石墨烯纳米片对异质结光电探测器的性能增强的影响进行了研究。结果表明,由于光激发量子点向石墨烯层的能量传递增强,光吸收增加,激子产生,导致光电流密度增加。此外,石墨烯:CdSe量子点/CdS纳米棒界面可以有效地促进电荷载流子的传输。这项工作提供了一个有前途的方法,开发高性能的可见光光电探测器,并利用石墨烯的光电器件的有利功能。
Integration of graphene with semiconducting quantum dots (QDs) provides an elegant way to access the intrinsic properties of graphene and optical properties of QDs concurrently to realize the high-performance optoelectronic devices. In the current article, we have demonstrated the high-performance photodetector based on graphene: CdSe QDs/CdS nanorod heterostructures. The resulting heterojunction photodetector with device configuration ITO/graphene: CdSe/CdS nanorods/Ag show excellent operating characteristics including a maximum photoresponsivity of 15.95 AW−1 and specific detectivity of 6.85 × 1012 Jones under 530 nm light illumination. The device exhibits a photoresponse rise time of 545 ms and a decay time of 539 ms. Furthermore, the study of the effect of graphene nanosheets on the performance enhancement of heterojunction photodetector is carried out. The results indicate that, due to the enhanced energy transfer from photoexcited QDs to graphene layer, light absorption is increased and excitons are generated led to the enhancement of photocurrent density. In addition to that, the graphene: CdSe QDs/CdS nanorod interface can facilitate charge carrier transport effectively. This work provides a promising approach to develop high-performance visible-light photodetectors and utilizing advantageous features of graphene in optoelectronic devices.