Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling
Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling
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用于标准制造、安装和冷却的多芯片 SiC MOSFET 功率模块
DOI：
10.23919/ipec.2018.8507834
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
B. Mouawad
中科院分区：
文献类型：
--
作者：
A. Castellazzi;A. Fayyaz;E. Gurpinar;A. Hussein;Jianfeng Li;B. Mouawad
要在应用中充分利用SiC功率MOSFET的上级特性，需要开发定制封装解决方案。它们的设计需要完全涵盖电磁和电热方面，以产生主要的系统级效益。新的设计方法，特别是需要在更高的额定电压的并行多芯片结构。为了充分利用SiC技术的颠覆性潜力，本文对SiC定制功率模块开发过程中的经验进行了回顾，特别关注与最广泛的制造、转换器组装和大批量应用热管理解决方案兼容的模块设计。
Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield major system-level benefits. New design approaches are needed in particular for parallel multi-chip structures at higher voltage ratings. With the aim of enabling full exploitation of the disruptive potential of SiC technology, this paper proposes a review of learnings made in the development of SiC bespoke power modules, focusing in particular on module designs compatible with the most widely established manufacturing, converter assembly and thermal management solutions for large volume applications.