Interfacial quality improvement of Cu(In,Ga)Se2 thin film solar cells by Cu-depletion layer formation
Interfacial quality improvement of Cu(In,Ga)Se2 thin film solar cells by Cu-depletion layer formation
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通过形成铜耗尽层改善 Cu(In,Ga)Se2 薄膜太阳能电池的界面质量
DOI：
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发表时间：
2016
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通讯作者：
A. Yamada
中科院分区：
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作者：
Takahito Nishimura;Soma Toki;Hiroki Sugiura;Kazuyoshi Nakada;A. Yamada
在Cu(In,Ga)Se2 （CIGS）沉积过程的第二阶段后，引入随时间的Se辐照，以控制Cu2Se层。引入硒辐照可以提高CIGS太阳能电池的开路电压和填充系数。我们得出结论，控制Cu2Se层导致cu耗尽CIGS层（CDL）的形成，由于CIGS和CDL之间形成的价带偏移抑制了界面重组，从而提高了转换效率。最后，当tSe为5 min时，效率最高，为19.8%。这种非常简单的新技术有望改善光伏性能。
Se irradiation with time, tSe, was introduced after the second stage of a three-stage process to control the Cu2Se layer during Cu(In,Ga)Se2 (CIGS) deposition. Open circuit voltage and fill factor of CIGS solar cells could be improved by introducing Se irradiation. We concluded that the control of the Cu2Se layer led to the formation of a Cu-depletion CIGS layer (CDL), which improved conversion efficiency owing to suppression of interfacial recombination by a valence band offset formed between CIGS and the CDL. Finally, highest efficiency of 19.8% was achieved with tSe of 5 min. This very simple and new technique is promising for the improvement of photovoltaic performance.