Transport properties of unintentionally doped iron silicide thin films on silicon(111)
Transport properties of unintentionally doped iron silicide thin films on silicon(111)
复制标题
硅上无意掺杂的硅化铁薄膜的输运特性(111)
DOI：
10.1116/1.589956
复制
发表时间：
1998
影响因子：
1.4
通讯作者：
I. Ali
中科院分区：
文献类型：
--
作者：
P. Muret;I. Ali
研究了铁硅共溅射半导体β-FeSi_2薄膜及其退火后的输运性质。在这些多晶薄膜中，大多数载流子是电子，并且它们的霍尔迁移率在室温下可以达到900 cm 2/V s的值。 研究了非故意掺杂硅化物薄膜的电导、霍尔效应和光电导。在其中两个得到的结果，因为它们是霍尔浓度的极值的代表。在室温下，它们分别是1.8×1017和6×1015电子cm−3。除了浅施主只存在于第一个样品中，较深的中心显示电离能分别为0.11和0.23 eV。对于第二个样品，必须考虑衬底贡献，以提取与单独的β-FeSi 2膜相关的值。在80 K时，光电导在0.86-0.87 eV处出现最大值，与样品的电导率有很好的相关性。
Transport properties of semiconducting β-FeSi2 thin films obtained by co-sputtering of iron and silicon and post-anneal are investigated. In these polycrystalline thin films, majority carriers are electrons and their Hall mobility can reach values of 900 cm2/V s at room temperature. Conductivity, Hall effect and photoconductivity of unintentionally doped silicide thin films are studied. The results obtained in two of them are presented, because they are representative of the extreme values found for the Hall concentration. They turn out to be, respectively, 1.8×1017 and 6×1015 electrons cm−3 at room temperature. In addition to shallow donors present only in the first sample, deeper centers show ionization energy of 0.11 and 0.23 eV, respectively. For the second sample, the substrate contribution has to be considered for extracting values which are relevant for the β-FeSi2 film alone. Photoconductivity takes place in these samples: at 80 K, it shows a maximum value at 0.86–0.87 eV, which correlates well wi...