Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
复制标题
Ge/Si(0.35)Ge(0.65) 量子阱结构中 1.3 μm 处的量子限制斯塔克效应。
作者：
M. Rouifed;P. Chaisakul;D. Marris‐Morini;J. Frigerio;G. Isella;D. Chrastina;S. Edmond;X. Le roux;J. Coudevylle;L. Vivien
Ge/SiGe 量子阱结构中的室温量子限制斯塔克效应在 1.3 μm 波长下被报道。工作波长通过应变工程进行调整。采用低能等离子体增强化学气相沉积在Si(0.21)Ge(0.79)虚拟衬底上生长20个周期的应变补偿量子阱(8 nm Ge阱和12 nm Si(0.35)Ge(0.65)势垒)。每孔吸收的光分数允许在 1.3 μm 左右进行强调制。激子峰的半峰半宽仅为 12 meV，因此可以讨论限制此类器件性能的物理机制。
Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.