Formation of Kondo Lattice in La1-xCexNi
Formation of Kondo Lattice in La1-xCexNi
复制标题
La1-xCexNi 中近藤晶格的形成
DOI：
10.1143/jpsj.55.3165
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发表时间：
1986
影响因子：
1.7
通讯作者：
Kiyoo Sato
中科院分区：
文献类型：
--
作者：
Y. Isikawa;K. Mori;A. Fujii;Kiyoo Sato
在2-300K温度范围内测量了La_(1-x)Ce_xNi单晶的电阻率和磁化率随温度的变化关系，得到了La_(1-x)Ce_xNi的相图，该相图由三部分组成：(1)孤立的近藤区(x_(0.6)和高温区)，其中4f电子表现为相当局域的电子，尽管Ce离子的价态大于3；(3)近藤晶格区(x>；0.6和低温区)，其中4f态变为离域状态。
Temperature dependences of the resistivity and the susceptibility of single crystals of solid solution La 1- x Ce x Ni have been measured in the temperature range 2–300 K. We have obtained a phase diagram of La 1- x Ce x Ni which is consisted of three parts; (1) isolated Kondo region ( x 0.6 and high temperature region), where the 4f electron behaves as fairly localized electron although the valence of the Ce ion is more than three and (3) Kondo lattice region ( x >0.6 and low temperature region), where the 4f state becomes a delocalized state.