12.5-Gb/s operation with 0.29-V.cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode
12.5-Gb/s operation with 0.29-V.cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode
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DOI：
10.1364/oe.20.002911
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发表时间：
2012-01-30
期刊：
影响因子：
3.8
通讯作者：
Usuki, Tatsuya
中科院分区：
文献类型：
--
作者：
Akiyama, Suguru;Baba, Takeshi;Usuki, Tatsuya
我们提出了高速操作的pin二极管为基础的硅马赫-曾德尔调制器，具有侧壁上的波导核心两侧的光栅。在频域中研究了使用有限脉冲响应数字滤波器生成的预加重信号，以显示滤波器如何针对不同的滤波器参数集工作。在大信号调制实验中，使用制造的调制器和预加重技术，在12.5 Gb/s处获得低至0.29V.cm V pi L。使用基本相同的驱动配置，可以实现高达25 Gb/s的操作。(C)2012美国光学学会
We present high-speed operation of pin-diode-based silicon Mach-Zehnder modulators that have side-wall gratings on both sides of the waveguide core. The use of pre-emphasis signals generated with a finite impulse response digital filter was examined in the frequency domain to show how the filter works for different filter parameter sets. In large signal modulation experiments, V pi L as low as 0.29 V.cm was obtained at 12.5 Gb/s using a fabricated modulator and the pre-emphasis technique. Operation of up to 25-Gb/s is possible using basically the same driving configurations. (C) 2012 Optical Society of America