Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction
Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction
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DOI：
10.1002/pssb.201900126
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发表时间：
2019-05
期刊：
影响因子：
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通讯作者：
E. J. Juárez-Pérez;Y. Qi
中科院分区：
文献类型：
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作者：
E. J. Juárez-Pérez;Y. Qi
载流子扩散长度和寿命参数的电子输运在纳米级半导体板已拟合使用一维模型和瞬态光电子发射电子显微镜提取的衰减数据。同时，传统的光致发光猝灭测量需要两个单独的样品，在阻挡层和猝灭层之间具有活性材料来表征载流子输运性质。在这项工作中，只有一个含有不同厚度活性材料的γ-InSe的几层单晶样品用于获得与先前报道的层状InSe中垂直载流子扩散值一致的共同扩散系数。
Carrier diffusion length and lifetime parameters for electron transport at nanoscale semiconductor slabs have been fitted using a 1D model and the decay data extracted from transient photoemission electron microscopy. Meanwhile, a conventional photoluminescence quenching measurement needs two separate samples with an active material between blocking and quenching layers to characterize the carrier transport properties. In this work, only one few‐layer monocrystalline sample of γ‐InSe containing different thicknesses of active material is used to obtain a common diffusion coefficient consistent with previously reported values for vertical carrier diffusion in layered InSe.