New Deep Ultraviolet Source For Microlithography
New Deep Ultraviolet Source For Microlithography
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用于微光刻的新型深紫外光源
DOI：
10.1117/12.933582
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
C. Wood
中科院分区：
文献类型：
--
作者：
M. Ury;J. C. Matthews;C. Wood
研制了一种无电极微波深紫外光源。该光源在190 ~ 260 nm之间产生独特的强光谱。在1500瓦的微波功率输入水平下，深紫外辐射功率输出效率超过10%。电极的缺乏避免了输出衰减，由于电极溅射，可导致深紫外线下降和早期灯泡故障与紧凑的电弧。光学系统已经被设计成利用该源以具有良好的强度、均匀性和准直特性的深UV对晶片进行有效的泛光照射。该源的一个应用是便携式适形掩模（PCM）技术，以满足亚微米分辨率的要求超过轮廓表面。在该应用中，使用微波供电的深UV源清除2微米PMMA层的暴露时间小于30秒。
An electrodeless microwave powered deep UV source has been developed. This source pro-duces a unique intense spectrum between 190 and 260nm. Deep UV radiated power output efficiencies exceed 10% at microwave power input levels of 1500 watts. The lack of elec-trodes avoids output attenuation due to electrode sputtering that can cause deep UV fall-off and early bulb failure with compact arcs. Optical systems have been designed to utilize this source for effective flood irradiation of wafers with deep UV having good intensity, uniformity and collimation characteristics. One application of this source is to the portable conformable mask (PCM) technique for meeting submicrometer resolution requirements over profiled surfaces. In this application the exposure time to clear a 2 micrometer PMMA layer using the microwave powered deep UV source is less than 30 seconds.