Highly efficient metal-free growth of nitrogen-doped single-walled carbon nanotubes on plasma-etched substrates for oxygen reduction.
Highly efficient metal-free growth of nitrogen-doped single-walled carbon nanotubes on plasma-etched substrates for oxygen reduction.
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DOI：
10.1021/ja105617z
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发表时间：
2010-10
影响因子：
15
通讯作者：
Dingshan Yu;Qiang Zhang;L. Dai
中科院分区：
文献类型：
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作者：
Dingshan Yu;Qiang Zhang;L. Dai
我们首次开发了一种简单的等离子体蚀刻技术，以有效地产生无金属颗粒催化剂，用于无金属生长未掺杂和/或氮掺杂的单壁碳纳米管（CNT）。与未掺杂的碳纳米管相比，新制备的不含金属的含氮碳纳米管被证明在酸性介质中对氧还原反应（ORR）显示出相对良好的电催化活性和长期稳定性。由于等离子体蚀刻技术的高度通用性，在这项研究中开发的方法可以应用于许多其他基板的各种应用，从能源相关的电子和生物医学系统的无金属碳纳米管的有效增长。
We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.