A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
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DOI：
10.1063/1.109026
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发表时间：
1993-06-28
影响因子：
4
通讯作者：
MORKOC, H
中科院分区：
文献类型：
--
作者：
LIN, ME;SVERDLOV, B;MORKOC, H
我们报告6 H-SiC和蓝宝石衬底上生长的GaN样品的结构，电学和光学数据。采用两阶段衬底制备过程从6 H-SiC和c面蓝宝石衬底去除氧，而不需要复杂的高温热脱气。蓝宝石和SiC衬底都用氢等离子体处理以减少表面污染，如通过观察尖锐的（1 X 1）重构RHEED（反射高能电子衍射）图案所证明的。薄氮化铝缓冲层和GaN薄膜的结晶质量进行了研究，温度依赖的霍尔测量，光致发光，和X射线衍射。在SiC衬底上获得了室温迁移率高达580 cm 2/V s的层。
We report structural, electrical, and optical data for GaN samples grown on both 6H-SiC and sapphire substrates. A two-stage substrate preparation procedure was employed for removing oxygen from 6H-SiC and c-plane sapphire substrates without the need for elaborate high-temperature thermal degassing. Both sapphire and SiC substrates were treated with hydrogen plasma to reduce the surface contamination as evidenced by the observation of sharp (1 X 1) reconstruction RHEED (reflected high-energy electrons diffraction) patterns. Thin AlN buffer layers were employed and the crystalline quality of GaN films was studied by temperature-dependent Hall measurements, photoluminescence, and x-ray diffraction. Layers with room-temperature mobilities as high as 580 cm2/V s on SiC substrates were obtained.