Enhanced collection efficiencies and performance of interband cascade structures for narrow bandgap semiconductor thermophotovoltaic devices
Enhanced collection efficiencies and performance of interband cascade structures for narrow bandgap semiconductor thermophotovoltaic devices
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DOI：
10.1063/1.5030904
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发表时间：
2018-07
影响因子：
3.2
通讯作者：
Wenxiang Huang;L. Lei;Lu Li;J. Massengale;Rui Q. Yang;T. Mishima;Michael B. Santos
中科院分区：
文献类型：
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作者：
Wenxiang Huang;L. Lei;Lu Li;J. Massengale;Rui Q. Yang;T. Mishima;Michael B. Santos
我们报告的窄带隙（在300 K时为0.2 eV）的热光伏（TPV）器件与InAs/GaSb II型超晶格吸收体的比较研究。通过比较三种窄带隙TPV结构（单吸收体和多吸收体）的特性，发现传统单吸收体TPV电池的器件性能主要受到与较短扩散长度（300 K时为1.5 μm）相关的较小收集效率的限制。此外，这项研究表明，多级带间级联（IC）TPV结构与薄的个人吸收体可以规避扩散长度的限制，并能够实现光生载流子的收集效率接近100%。此外，与传统的单吸收体TPV结构相比，IC TPV器件的开路电压、填充因子、输出功率和功率转换效率可以显著增加。这些结果进一步验证了…
We report on a comparative study of narrow-bandgap (∼0.2 eV at 300 K) thermophotovoltaic (TPV) devices with InAs/GaSb type-II superlattice absorbers. By comparing the characteristics of three narrow bandgap TPV structures with a single absorber or multiple discrete absorbers, it is clearly demonstrated that the device performance of a conventional single-absorber TPV cell is limited mainly by the small collection efficiency associated with a relatively short diffusion length (1.5 μm at 300 K). Furthermore, this study revealed that multi-stage interband cascade (IC) TPV structures with thin individual absorbers can circumvent the diffusion length limitation and are capable of achieving a collection efficiency approaching 100% for photo-generated carriers. Additionally, the open-circuit voltage, the fill factor, the output power, and the power conversion efficiency can be significantly increased in IC TPV devices compared to the conventional single-absorber TPV structure. These results have further validate...