InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy.
InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy.
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用于 X 射线光子计数光谱的 InGaP (GaInP) 台面 p-i-n 光电二极管。
DOI：
10.1038/s41598-017-10502-y
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发表时间：
2017
影响因子：
4.6
通讯作者：
Butera S
中科院分区：
文献类型：
--
作者：
Butera S
在本文中，第一次InGaP（GaInP）光子计数X射线光电二极管已被开发，并被证明是适用于光子计数X射线光谱时，耦合到一个低噪声的电荷敏感的三极管。报道了随机选取的两个直径为200 μm和两个直径为400 μm的In_（0.5）Ga_（0.5）P p ~+-i-n ~梅萨光电二极管的特性，p ~+-i-n ~+结构的i层厚度为5 μm。在室温下，在55 Fe放射性同位素X射线源的照射下，积累了X射线谱，对于直径为200 μm的In0.5Ga0.5P器件，在5.9 keV的反向偏压下，获得了900 eV的最佳谱仪能量分辨率（FWHM）。系统噪声分析也进行了计算和不同的噪声贡献。
In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 μm diameter and two randomly selected 400 μm diameter In0.5Ga0.5P p+-i-n+mesa photodiodes is reported; the i-layer of the p+-i-n+structure was 5 μm thick. At room temperature, and under illumination from an55Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 μm In0.5Ga0.5P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.