p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3
p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3
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DOI：
10.1016/j.solmat.2010.06.011
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发表时间：
2011-08-01
影响因子：
6.9
通讯作者：
Krishnan, B.
中科院分区：
文献类型：
--
作者：
Garza, C.;Shaji, S.;Krishnan, B.
采用真空加热Sb_2S_3/Cu多层膜的方法制备了CuSbS_2薄膜。Sb 2S 3薄膜是在室温（27 ℃）下由含有SbCl 3和Na 2S 2 O3盐的化学浴在良好清洁的玻璃基板上制备的。采用热蒸发法在Sb_2S_3薄膜上沉积铜薄膜，并对Sb_2S_3/Cu层进行不同条件下的退火处理。采用不同的表征技术分析了不同Cu层厚度和加热条件下形成的薄膜的结构、形貌、光学和电学性能。XRD分析表明，在300和380 ℃下形成的薄膜由具有硫锑铁矿结构的CuSbS 2组成。这些薄膜表现出p型导电性，并且电导率值随着铜含量的增加而增加。CuSbS 2的光学带隙被评估为接近1.5eV。(C)2010 Elsevier B. V.保留所有权利。
We report the preparation of copper antimony sulfide (CuSbS2) thin films by heating Sb2S3/Cu multilayer in vacuum. Sb2S3 thin film was prepared from a chemical bath containing SbCl3 and Na2S2O3 salts at room temperature (27 degrees C) on well cleaned glass substrates. A copper thin film was deposited on Sb2S3 film by thermal evaporation and Sb2S3/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 degrees C consist of CuSbS2 with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS2 was evaluated as nearly 1.5 eV. (C) 2010 Elsevier B.V. All rights reserved.