Five-Minute TSV Copper Electrodeposition
Five-Minute TSV Copper Electrodeposition
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DOI：
10.1149/2.0751414jes
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发表时间：
2014
影响因子：
3.9
通讯作者：
K. Kondo;Chikara Funahashi;Y. Miyake;Yasuhiko Takeno;Taro Hayashi;M. Yokoi;N. Okamoto;Takeyasu Saito
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文献类型：
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作者：
K. Kondo;Chikara Funahashi;Y. Miyake;Yasuhiko Takeno;Taro Hayashi;M. Yokoi;N. Okamoto;Takeyasu Saito
TSV（Through Silicon Via）因其高速图像处理和低能耗而成为下一代智能手机、驾驶辅助和医疗保健系统的一种很有前途的互连技术。传统的TSV电沉积由于施加小于10mA/cm 2 的低电流而需要15分钟至1.5小时。使用了两种形状的通孔：柱状和圆锥状。柱状通孔在通孔口处具有锐角边缘，电流线集中在这些边缘处，从而引入空隙。在圆锥形通孔中，通孔底部的锐角集中了电流线，从而改善了自下而上的填充。使用圆锥形过孔，我们能够在 5 分钟内电沉积直径 6 μm、深 25 μm 的 TSV 过孔。能够施加90mA/cm 2 的非常高的导通电流而不会形成任何空隙。知识共享归属条款下的作品
TSV(Through Silicon Via) is a promising interconnection for the next generation smartphone, driving assistance and medical care system because of its high speed image processing and low energy consumption. Conventional TSV electrodeposition requires 15 minutes to 1.5 hour due to the application of a low current of less than 10 mA/cm 2 . Two shapes of vias have been used, columnar and conical shapes. Columnar shape via has acute edges at via mouth and the current lines concentrates at these edges, hence introducing void. In conical shape via, the acute angle at via bottom concentrates the current lines, hence improving bottom up filling. Using conical vias, we are able to electrodeposit a 6 μ m diameter and 25 μ m deep TSV via within 5 minutes. A very high on-current of 90 mA/cm 2 is able to be applied without any void formation. The an under the terms of the Creative Commons Attribution the work