Photoreflectance characterisation of Ar + ion etched and SiCI4 reactive ion etched silicon (100)
Photoreflectance characterisation of Ar + ion etched and SiCI4 reactive ion etched silicon (100)
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Ar 离子蚀刻和 SiCl4 反应离子蚀刻硅的光反射表征 (100)
DOI：
10.1179/mst.1997.13.11.961
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发表时间：
1997
影响因子：
1.8
通讯作者：
Crean
中科院分区：
文献类型：
--
作者：
M. Murtagh;S. Lynch;P. Kelly;S. Hildebrandt;P. A. F. Herbert;C. Jeynes;G. Crean;Dr Mr Lynch;Dr Kelly;Mr Hildebrandt;Herbert Dr;Crean
使用光反射 (PR)、卢瑟福背散射光谱法和光谱椭圆光度法对 p 型 2–3 Ω cm 电阻率 Si (100) 基板进行 Ar+ 离子和 SiCl4 反应离子蚀刻 (RIE) 蚀刻。在各种直流蚀刻偏压（0-500 V）下进行等时（5 分钟）蚀刻。观察到室温 PR 光谱的 λ3-λ1 Si 转变发生了明显的变化，这是两种蚀刻模式的蚀刻偏差的函数。研究发现，PR 响应对离子轰击的程度和性质都很敏感。
Etching with Ar+ ions and SiCl4 reactive ion etching (RIE) of p type 2–3 ω cm resistivity Si (100) substrates was characterised using photorefiectance (PR), Rutherford backscattering spectrometry, and spectroscopic ellipsometry. Isochronal (5 min) etching was performed at various dc etch biases (0–500 V). A distinct modification to the λ3–λ1 Si transition of the room temperature PR spectra was observed as a function of etch bias for both etching modes. It was found that the PR response is sensitive to both the degree and nature of the ion bombardment.