Porous silicon formation by HF chemical etching for antireflection of solar cells
Porous silicon formation by HF chemical etching for antireflection of solar cells
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DOI：
10.1002/pssc.200461225
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发表时间：
2005-06
期刊：
影响因子：
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通讯作者：
S. Yae;Hiroyuki Tanaka;Tsutomu Kobayashi;N. Fukumuro;H. Matsuda
中科院分区：
文献类型：
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作者：
S. Yae;Hiroyuki Tanaka;Tsutomu Kobayashi;N. Fukumuro;H. Matsuda
在Si晶片上形成大孔和发光纳米孔Si，所述Si晶片用细金属颗粒改性，通过简单地将晶片浸入HF溶液中而没有偏压或氧化剂。通过无电置换沉积从包括HF的金属盐溶液将金属颗粒沉积到n-Si晶片上。Si的蚀刻由氧的局部阴极还原和Si的局部阳极氧化组成。多孔层仅形成在Si晶片的金属颗粒沉积区域上。硅的腐蚀速率和表面形貌随腐蚀过程中溶解氧浓度、金属颗粒种类和光照强度等腐蚀条件的变化而变化。微米尺寸的大孔Si层对于太阳能电池的封装是有效的。通过对n-Si表面进行全面的化学改性，可以制备出高效的光电化学太阳能电池。（© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Macroporous and luminescent nanoporous Si are formed on Si wafers, which are modified with fine metal particles, by simply immersing the wafers in a HF solution without a bias or an oxidizing agent. The metal particles are deposited onto n-Si wafers by electroless displacement deposition from a metal salt solution including HF. The etching of Si consists of a local cathode reduction of oxygen and a local anode oxidation of Si. The porous layer is formed only on the metal-particle-deposited area of the Si wafers. The etching rate and surface morphology of Si change with the etching conditions such as dissolved oxygen concentration, kinds of metal particles, and photoillumination intensity during etching. The micrometer-sized macroporous Si layer is effective for the antireflection of solar cells. Efficient photoelectrochemical solar cells can be prepared by entire chemical modification of the n-Si surface. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)