A 2-W GaN-based three-level class-D power amplifier with tunable back-off efficiency
A 2-W GaN-based three-level class-D power amplifier with tunable back-off efficiency
复制标题
具有可调回退效率的 2W GaN 基三电平 D 类功率放大器
DOI：
10.1109/mwsym.2017.8059068
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
K. Kunihiro
中科院分区：
文献类型：
--
作者：
T. Soma;S. Hon;A. Wentzel;W. Heinrich;K. Kunihiro
提出了一种700MHz电压模式三电平D类氮化镓功率放大器。该功率放大器在最大输出功率为2.1 W时的漏极效率为68.7%，在9 dB功率回退时的漏极效率为71.6%。通过调整IC的电源电压，最佳功率回退可轻松从3 dB变为12 dB，而不会降低峰值效率。PA由一个单片微波集成电路（MMIC）组成，没有功率合成器。据我们所知，这是提供高回退效率的最简单架构。
This paper presents a voltage-mode three-level class-D gallium nitride (GaN) power amplifier (PA) for the 700MHz band. The PA achieves a drain efficiency of 68.7%, at a maximum output power of 2.1 W and a drain efficiency of 71.6% at 9-dB power back-off. The optimum power back-off is easily changed from 3 to 12 dB by tuning the supply voltage to the IC without degrading the peak efficiency. The PA consists of a single monolithic microwave integrated circuit (MMIC) without a power combiner. This is, to our best knowledge, the simplest architecture offering high back-off efficiency.