Radiation hardness of diamond and silicon sensors compared
Radiation hardness of diamond and silicon sensors compared
复制标题
金刚石和硅传感器的辐射硬度比较
DOI：
10.1002/pssa.200776327
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Huhtinen
中科院分区：
文献类型：
--
作者：
W. de Boer;J. Bol;A. Furgeri;S. Mueller;C. Sander;E. Berdermann;M. Pomorski;M. Huhtinen
从实验和理论上比较了硅带电粒子传感器与单晶和多晶金刚石传感器的抗辐射能力。结果表明，对于Si和C传感器，NIEL假设，即信号损失与非电离能量损失成正比，是目前数据的一个很好的近似。在入射质子和中子能量远高于0.1 GeV时，辐射损伤由非弹性截面主导，而在非相对论能量下，弹性截面占主导地位。较小的非弹性核子-碳截面和轻的核碎片意味着在高能量下，金刚石比硅更难辐射，而在低于0.1 GeV的能量下，差异变得明显更小。（© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si‐ and C‐sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non‐Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non‐relativistic energies the elastic cross section prevails. The smaller inelastic nucleon‐carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)