Investigation in electrical characteristics of vertical junction n-type Tunnel FET
Investigation in electrical characteristics of vertical junction n-type Tunnel FET
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垂直结n型隧道FET电特性研究
DOI：
10.1109/ted.2018.2874534
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发表时间：
2018
影响因子：
3.1
通讯作者：
“
中科院分区：
文献类型：
--
作者：
P.-C. Huang;T. Tanamoto;M. Goto;S. Kawanaka;H. Hieda;M. Koyama;M. Takenaka;and S. Takagi;“
在本文中，硅隧道场效应晶体管（TFSFET）与垂直隧穿结（nVTFSFET）的制造工艺兼容的传统硅MOSFET的使用证明。垂直隧穿结是通过仅使用离子注入（I/I）在p型源极延伸的栅极重叠区域下形成n型表面口袋区域来实现的。研究了碳（C）共注入和补偿间隔层（OSS）的形成对TFET性能的影响。结果表明，在垂直隧穿结的I/I之前进行C共注入和OSS形成，可以提高所制备的nVTFFET的性能。已经发现，另一方面，nVTFET表现出反向短沟道效应，其中阈值电压随着沟道长度的减小而增加，并且这种效应与亚阈值斜率的增强的温度依赖性相关。这些现象归因于源极结和沟道之间存在由硼从源极区扩散形成的电子势垒。
In this paper, Si tunnel FETs (TFETs) with the vertical tunneling junction (nVTFETs) were demonstrated by utilizing fabrication processes compatible to those used for conventional Si MOSFETs. The vertical tunneling junction was realized by forming n-type surface pocket regions under gate overlap regions of p-type source extensions only using the ion implantation (I/I). The impacts of carbon (C) coimplantation and formation of offset spacer (OSS) on the TFET performance were examined. As a result, the performance of the fabricated nVTFETs was enhanced by applying the C coimplantation and the OSS formation before the I/I for the vertical tunneling junctions. It has been found, on the other hand, that nVTETs exhibit a reverse short-channel effect, where the threshold voltage increases with decreasing the channel length, and that this effect is correlated with the enhanced temperature dependence of subthreshold slope. These phenomena are attributable to the existence of a thermionic barrier between the source junction and the channel, formed by boron diffusion from the source region.