Material considerations for avalanche photodiodes (Invited paper)
Material considerations for avalanche photodiodes (Invited paper)
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DOI：
10.1109/jstqe.2008.918313
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发表时间：
2008-07-01
影响因子：
4.9
通讯作者：
Tan, C. H.
中科院分区：
文献类型：
--
作者：
David, J. P. R.;Tan, C. H.
雪崩光电二极管（APD）利用碰撞电离过程，广泛用于微弱光信号的检测和放大。材料的选择对于特定波长的检测至关重要，并且通常有利的是使用不同材料的组合来优化整体器件性能。APD现在能够覆盖从红外到紫外波长的宽光谱。本文将回顾在不同波长区域实现高增益和低过量噪声的材料要求。
Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals by utilizing the impact ionization process. The choice of material is critical for the detection of a particular wavelength, and it is often expedient to use a combination of different materials to optimize the overall device performance. The APDs are now capable of covering a wide spectrum from the infrared down to the ultraviolet wavelengths. This paper will review the material requirements to achieve high gain with low excess noise at the different wavelength regions.